ISSUED DATE :2005/07/25
REVISED DATE :
GJ1386
Description
P NP EP ITAX I AL S ILI CO N T RANSI STOR
The GJ1386 is designed for low frequency applications.
Features
&
V
CE
(sat) =-0.55V(Typ.) (I
C
/I
B
=-4A/-0.1A)
Low
Package Dimensions
&Excellent DC current gain characteristics
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
*Collector Current (Pulse)
Total Power Dissipation
(T
C
=25 : )
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-30
-20
-6
-5
-10
20
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics (Ta = 25 : )
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-500
-500
-1
580
-
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
I
C
=-50uA , I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50uA ,I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-4A, I
B
=-0.1A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-6V, I
E
=50mA, f=30MHz
V
CB
=-20V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
Rank
Range
P
82 - 180
Q
120 - 270
R
180 - 390
E
370 - 580
GJ1386
Page: 1/2
GTM [ GTM CORPORATION ]
