ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
GJ3669
Description
Package Dimensions
NPN EPITAXIAL PLANAR T RANSISTOR
The GJ3669 is designed for using in power amplifier applications, power switching applications.
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Device Dissipation (T
A
=25 : )
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Ratings
80
80
5
2
1.25
150
-55 ~ +150
Unit
V
V
V
A
W
:
:
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
ton
(Turn-On Time)
tstg
(Storage Time)
tf
(Fall Time)
Min.
80
80
5
-
-
-
-
70
40
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
-
100
30
0.2
1.0
0.2
Max.
-
-
-
1
1
0.5
1.2
240
-
-
-
-
-
-
Unit
V
V
V
uA
uA
V
V
I
C
=100uA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
V
CE
=2V, I
E
=500mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V, R
L
=30 ,
I
C
=1A,
I
B1
=-I
B2
=50mA,
Duty Cycle 1%
*Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
MHz
pF
us
us
us
Classification Of h
FE
1
Rank
Range
O
70 ~ 140
Y
120 ~ 240
GJ3669
Page: 1/2
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