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GJ42C 参数 Datasheet PDF下载

GJ42C图片预览
型号: GJ42C
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 128 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GJ42C的Datasheet PDF文件第2页  
ISSUED DATE :2005/05/12
REVISED DATE :
GJ42C
Description
Features
P N P EP I TAXI AL PL AN AR T R AN SI ST O R
The GJ42C is designed for use in general purpose amplifier and switching applications.
*Complementary to GJ41C
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
(DC)
Collector Current (
Pulse)
Junction Temperature
Storage Temperature
Total Power Dissipation
, unless otherwise specified)
Symbol
Ratings
V
CBO
-100
V
CEO
-100
V
EBO
-5
I
C
-6
I
C
-10
Tj
+150
Ts
TG
-55 ~ +150
P
D
2
20
P
D
(T
C
=25 : )
Unit
V
V
V
A
A
:
:
W
W
Electrical Characteristics
(Rating at Ta=25 : )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
*BV
CEO
BV
EBO
I
CES
I
CEO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
fT
-100
-100
-5
-
-
-
-
-
30
15
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-10
-50
-500
-1.5
-2.0
-
75
-
V
V
V
uA
uA
uA
V
V
MHz
I
C
=-1mA, I
E
=0
I
C
=-30mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CE
=-100V, V
EB
=0V
V
CE
=-60V, I
B
=0
V
EB
=-5V, I
C
=0
I
C
=-6A, I
B
=-600mA
V
CE
=-4V, I
C
=-6A
V
CE
=-4V, I
C
=-300mA
V
CE
=-4V, I
C
=-3A
V
CE
=-10V, I
C
=-500mA, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
GJ42C
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