Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ75N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
4.5m
75A
Description
The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Features
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AS
Tj, Tstg
Ratings
25
±20
75
62.5
350
96
0.75
400
40
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
mJ
A
:
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
1.3
110
Unit
:
/W
: /W
GJ75N03
Page: 1/4
GTM [ GTM CORPORATION ]
