ISSUED DATE :2005/05/06
REVISED DATE :
GJ8050
Description
Features
NPN EPITAXIAL TRANSISTOR
The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
*High Collector current (IC: 1.5A)
*Complementary to GJ8550
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
(Ta = 25 :
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Junction Temperature
Storage Temperature
Total Power Dissipation
, unless otherwise specified)
Symbol
Ratings
V
CBO
V
CEO
V
EBO
I
C
I
B
Tj
Ts
TG
P
D
40
25
6
1.5
0.5
+150
-55 ~ +150
1.25
Unit
V
V
V
A
A
:
:
W
Electrical Characteristics
(Rating at 25 :
Symbol
Min.
Typ.
ambient temperature unless otherwise specified)
Unit
Test Conditions
Max.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
40
25
6
-
-
-
-
-
45
120
40
100
-
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
100
100
0.5
1.2
1.0
-
500
-
-
-
V
V
V
nA
nA
V
V
V
MHz
pF
I
C
=100uA
I
C
=2mA
I
E
=100uA
V
CB
=35V
V
BE
=6V
l
C
=800mA, I
B
=80mA
l
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
2
Rank
Range
C
120 ~ 200
D
160 ~ 300
E
250 ~ 500
GJ8050
Page: 1/2
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