CORPORATION
GL158
Description
ISSUED DATE :2005/09/28
REVISED DATE :2005/12/09B
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
The GL158 is designed for general purpose switching and amplifier applications.
Features
&
Amps continuous current, up to 20Amps peak current
6
Package Dimensions
&Excellent gain characteristic specified up to 10Amps
&Very low saturation voltages
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
150
60
6
6
20
3
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Min.
150
60
6
-
-
-
-
-
-
-
-
-
100
100
75
25
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
,unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=100uA , I
E
=0
-
V
I
C
=10mA, I
B
=0
-
V
I
E
=100uA ,I
C
=0
50
nA
V
CB
=120V, I
E
=0
50
nA
V
CES
=60V
10
nA
V
EB
=6V, I
C
=0
50
mV
I
C
=100mA, I
B
=5mA
100
mV
I
C
=1A, I
B
=50mA
170
mV
I
C
=2A, I
B
=50mA
375
mV
I
C
=6A, I
B
=300mA
1.2
V
I
C
=6A, I
B
=300mA
1.15
V
V
CE
=1V, I
C
=6A
V
CE
=1V, I
C
=10mA
300
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=5A
V
CE
=1V, I
C
=10A
-
MHz
V
CE
=10V, I
C
=100mA, f=50MHz
GL158
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