Pb Free Plating Product
ISSUED DATE :2006/01/20
REVISED DATE :2006/05/03B
GL2306A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
40m
5A
The GL2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GL2306A is universally used for all commercial-industrial surface mount applications.
Description
*Capable of 2.5V gate drive
*Lower on-resistance
Features
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
3
Continuous Drain Current , V
GS
@4.5V
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
30
±12
5
4
20
2.7
0.02
-55 ~ +150
Value
45
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GL2306A
Page: 1/4
GTM [ GTM CORPORATION ]
