CORPORATION
GL359
Description
ISSUED DATE :2005/10/27
REVISED DATE :2005/12/09B
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
The GL359 is designed for general purpose switching and amplifier applications.
Features
&
Amps continuous current, up to 10Amps peak current
5
Package Dimensions
&Excellent gain characteristic specified up to 10Amps
&Very low saturation voltages
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-140
-100
-6
-5
-10
3
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Min.
-140
-100
-6
-
-
-
-
-
-
-
-
-
100
100
50
30
-
-
Typ.
-
-
-
-
-
-
-20
-90
-160
-300
-1.01
-0.925
200
200
90
50
15
125
,unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-100uA ,I
C
=0
-50
nA
V
CB
=-100V, I
E
=0
-50
nA
V
CES
=-100V
-10
nA
V
EB
=-6V, I
C
=0
-50
mV
I
C
=-100mA, I
B
=-10mA
-115
mV
I
C
=-1A, I
B
=-100mA
-220
mV
I
C
=-2A, I
B
=-200mA
-420
mV
I
C
=-4A, I
B
=-400mA
-1.17
V
I
C
=-4A, I
B
=-400mA
-1.16
V
V
CE
=-1V, I
C
=-4A
V
CE
=-1V, I
C
=-10mA
300
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
V
CE
=-1V, I
C
=-4A
V
CE
=-1V, I
C
=-10A
-
MHz
V
CE
=-10V, I
C
=-100mA, f=50MHz
GL359
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