CORPORATION
GL3906
Description
Package Dimensions
PNP EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2004/04/23
REVISED DATE :
The GL3906 is designed for general purpose Switching and Amplifier Applications.
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
-40
-40
-5
-200
1.5
Unit
V
V
V
mA
W
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
at Ta = 25 :
Min.
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-0.2
-
-0.84
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
V
I
C
=-10uA
I
C
=-1mA
I
E
=-10uA
V
CB
=-30V
V
EB
=-3V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-20V, I
E
=-10mA, f=100MHz
V
CB
=-5V, f=1MHz
Test Conditions
Note:Pulse test:PW<=300us, Duty Cycle<=2%
1/2
GTM [ GTM CORPORATION ]
