GL5672
Description
1/2
NPN LOW FREQUENCY TRANSISTOR
T
he GL5672 is a low frequency transistor . Excellent
DC current gain characteristics.
Package Dimension
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.70
6.30
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Collector Current (PULSE)(note1)
Total Power Dissipation at Ta=25 :
Note1 :single pulse, PW=10ms
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Ratings
+150
-55 ~ +150
60
50
6
3
5
2
V
V
V
A
A
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
FT
at Ta = 25 :
Min.
60
50
6
-
-
-
120
-
Typ.
-
-
-
-
-
0.1
-
210
25
Max.
-
-
-
0.1
0.1
0.35
400
-
-
MHz
pF
Unit
V
V
V
uA
uA
V
IC=50uA ,IE=0
IC=1mA,IB=0
IE=50uA
VCB=60V
VEB=5V
IC=1A, IB=50mA
(note1)
VCE=2V, IC=0.5A (note1)
VCE=2V, IE=0.5A, f=100MHz
VCB=10V,IE=0, f=1MHz
Test Conditions
Cob
-
Note 1:Measured using pulse current.
Classification Of hFE
Rank
Range
A
120-240
B
200-400
GTM [ GTM CORPORATION ]
