ISSUED DATE :2005/02/18
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-30
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
V/к
V
-
-0.02
-
-
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5.3A
VGS= ̈́25V
-1.0
-3.0
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
nA
uA
uA
IGSS
-
-1
VDS=-30V, VGS=0
VDS=-24V, VGS=0
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-25
-
50
Static Drain-Source On-Resistance2
mӨ
RDS(ON)
-
100
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
9.2
2.8
5.2
11
8
16
Qg
Qgs
Qgd
Td(on)
Tr
ID=-5.3A
VDS=-24V
VGS=-4.5V
nC
-
-
-
V
DS=-15V
ID=-1A
GS=-10V
-
ns
V
Turn-off Delay Time
Fall Time
25
17
507
222
158
-
Td(off)
Tf
RG=6Ө
RD=15Ө
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
912
Ciss
Coss
Crss
VGS=0V
VDS=-15V
f=1.0MHz
pF
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
-1.2
VSD
IS=-2.3A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
-
29
20
-
-
ns
IS=-5.3A, VGS=0V
dI/dt=100A/ꢀs
Qrr
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 120к/W when mounted on Min. copper pad.
GL9435
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