欢迎访问ic37.com |
会员登录 免费注册
发布采购

GL965 参数 Datasheet PDF下载

GL965图片预览
型号: GL965
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 158 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GL965的Datasheet PDF文件第2页  
ISSUED DATE :2004/04/25
REVISED DATE :2004/12/08B
GL965
Description
NP N E PITAX I AL PLANAR T RANSI STOR
T
he GL965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Ratings
+150
-55 ~ +150
Unit
Absolute Maximum Ratings at Ta = 25 :
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Total Power Dissipation at Ta = 25 :
BVCBO
BVCEO
BVEBO
IC
IC
PD
40
20
7.0
5
8
2
V
V
V
A
A
W
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*h
FE
1
*h
FE
2
fT
Cob
at Ta = 25 :
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
MHz
pF
Unit
V
V
V
uA
uA
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
1
Rank
Range
Q
230-380
R
340-600
S
560-800
GL965
Page: 1/2