Pb Free Plating Product
ISSUED DATE :2005/04/06
REVISED DATE :
GL9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
80m
3.9A
Description
The GL9973 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Low Gate Charge
Features
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.70
6.30
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
Continuous Drain Current
3
, V
GS
@10V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
60
f 20
3.9
2.5
20
2.7
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
45
Unit
/W
GL9973
Page: 1/4
GTM [ GTM CORPORATION ]
