欢迎访问ic37.com |
会员登录 免费注册
发布采购

GLBCX53 参数 Datasheet PDF下载

GLBCX53图片预览
型号: GLBCX53
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延晶体管 [PNP SILICON EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 213 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GLBCX53的Datasheet PDF文件第2页  
ISSUED DATE :2005/08/18
REVISED DATE :2005/11/21B
GLBCX53
Description
P N P S I L I C O N E P I TA X I A L T R A N S I S T O R
The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose
amplification.
Features
&
Collector-Emitter Voltage: V
CEO
=-80V
Package Dimensions
&Complementary to GLBCP56
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°
TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
P
D
+150
-65 ~ +150
-100
-80
-5
1
1.5
:
:
V
V
V
A
W
Electrical Characteristics
(Ta = 25 : )
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Min.
-100
-80
-5
-
-
-
-
63
63
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-500
-1000
-
250
-
-
MHz
Unit
V
V
V
nA
nA
mV
mV
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, V
CE
=-2V,
V
CE
=-2V, I
C
=-5mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
* Pulse Test: Pulse Width
B
100 - 250
380 s, Duty Cycle 2%
Test Conditions
Classification Of h
FE
2
Rank
Range
A
63 - 160
GLBCX53
1/2