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GM1300 参数 Datasheet PDF下载

GM1300图片预览
型号: GM1300
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延晶体管 [PNP SILICON EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 172 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM1300的Datasheet PDF文件第2页  
CORPORATION
GM1300
Description
P NP S ILI CO N EP ITAX I AL T RANS I STOR
The GM1300 is designed for medium power amplifier applications.
ISSUED DATE :2006/03/14
REVISED DATE :
Features
&
FE(1)
=140~1000 (@V
CE
=-1V, I
C
=-0.5A)
h
Package Dimensions
&h
FE(2)
=60 (Min.) (@V
CE
=-1V, I
C
=-2A)
&Low Saturation Voltage V
CE(sat)
=-0.5 (Max.) (@I
C
=-2A, I
B
=-50mA)
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
Ratings
+150
-55~+150
-20
-10
-6
-2
-5
-200
1
Unit
:
:
V
V
V
A
A
mA
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
-20
-10
-6
-
-
-
-
-
140
60
-
-
Typ.
-
-
-
-
-
-
-0.3
-0.83
-
-
140
50
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-1mA ,I
C
=0
-100
nA
V
CB
=-20V, I
E
=0
-100
nA
V
CES
=-20V
-100
nA
V
EB
=-6V, I
C
=0
-0.5
V
I
C
=-2A, I
B
=-50mA
-1.5
V
V
CE
=-1V, I
C
=-2A
1000
V
CE
=-1V, I
C
=-0.5A
-
V
CE
=-1V, I
C
=-2A
-
MHz
V
CE
=-1V, I
C
=-0.5A, f=100MHz
-
pF
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE1
Rank
Range
Y
140 ~ 280
GR
200 ~ 400
BL
300 ~ 600
PE
500 ~ 1000
GM1300
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