CORPORATION
GM157
Description
Features
&
Volt V
CEO
-60
The GM157 is designed for general purpose switching and amplifier applications.
ISSUED DATE :2005/08/19
REVISED DATE :
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
Package Dimensions
&3 Amp continuous current
&Low saturation voltage
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-80
-60
-5
-3
-6
1.2
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
t
on
t
off
Min.
-80
-60
-5
-
-
-
-
-
-
70
100
80
40
100
-
-
-
Typ.
-
-
-
-
-
-150
-450
-0.9
-0.8
200
200
170
150
140
-
40
450
,unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-100uA ,I
C
=0
-100
nA
V
CB
=-60V, I
E
=0
-100
nA
V
EB
=-4V, I
C
=0
-300
mV
I
C
=-1A, I
B
=-100mA
-600
mV
I
C
=-3A, I
B
=-300mA
-1.25
V
I
C
=-1A, I
B
=-100mA
-1.0
V
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-50mA
300
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-2A
-
MHz
V
CE
=-5V, I
C
=-100mA, f=100MHz
30
pF
V
CB
=-10V, I
E
=0, f=1MHz
-
ns
V
CC
=-10V, I
C
=-500mA, I
B1
=I
B2
=-50mA
-
300 s, Duty Cycle
2%
*Measured under pulse condition. Pulse width
Spice parameter data is available upon request for this device.
1/2
GTM [ GTM CORPORATION ]
