GM2222A
Description
1/2
NPN EPITAXIAL PLANAR TRANSISTOR
T
he GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
75
40
6.0
600
1.2
V
V
V
mA
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
fT
at Ta = 25
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
MHz
Unit
V
V
V
nA
nA
nA
mV
V
V
V
IC=10uA
IC=10mA
IE=10uA
VCB=60V
VCB=60V,VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
VCE=20V, IC=20mA, f=100MHz
Test Conditions
GTM [ GTM CORPORATION ]
