Pb Free Plating Product
ISSUED DATE :2006/01/20
REVISED DATE :
GM2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
32m
5.3A
The GM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GM2306 is universally used for all commercial-industrial surface mount applications.
Description
*Capable of 2.5V gate drive
*Lower on-resistance
Features
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
20
±12
5.3
4.3
10
1.5
0.012
-55 ~ +150
Value
83.3
Unit
V
V
A
A
A
W
W/ :
:
Unit
:
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
GM2306
Page: 1/4
GTM [ GTM CORPORATION ]
