ISSUED DATE :2006/01/20
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
60
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.05
-
5.0
-
-
-
-
-
6
1.6
3
6
5
16
3
490
55
40
Max.
-
-
3.0
-
±100
10
25
160
220
10
-
-
-
-
-
-
780
-
-
Unit
V
V/ :
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
GS
= ±20V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0
V
GS
=10V, I
D
=2.0A
V
GS
=4.5V, I
D
=1.7A
I
D
=3A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
V
GS
=10V
R
G
=3.3
R
D
=30
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
25
26
Max.
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=3A, V
GS
=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
GM2308
Page: 2/4
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