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GM2501 参数 Datasheet PDF下载

GM2501图片预览
型号: GM2501
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 243 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM2501的Datasheet PDF文件第2页浏览型号GM2501的Datasheet PDF文件第3页浏览型号GM2501的Datasheet PDF文件第4页  
Pb Free Plating Product
ISSUED DATE :2005/12/16
REVISED DATE :
GM2501
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-20V
200m
-2.6A
The GM2501 provide the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage and battery power applications.
*Simple Drive Requirement
*Surface Mount Device
Description
Features
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
-20
±12
-2.6
-2.1
-10
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Continuous Drain Current
3
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
83.3
Unit
: /W
GM2501
Page: 1/4