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GM3669 参数 Datasheet PDF下载

GM3669图片预览
型号: GM3669
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 148 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM3669的Datasheet PDF文件第2页  
ISSUED DATE :2005/03/25
REVISED DATE :2005/11/28B
GM3669
Description
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GM3669 is designed for using in power amplifier applications, power switching application.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
P
D
)
Max.
-
-
-
1
1
0.5
1.2
240
-
-
-
-
-
-
uS
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=100uA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=80V, I
E
=0
V
BE
=5V, I
C
=0
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
V
CE
=2V, I
C
=0.5A
V
CB
=10V, f=1MHz
V
CC
=30V, R
L
=30 ,
I
C
=1A,
I
B1
=-I
B2
=50mA,
Duty Cycle 1%
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Ratings
+150
-55 ~ +150
80
80
5
2
1
Unit
:
:
V
V
V
A
W
Electrical Characteristics
(T
A
= 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
T
on
T
stg
T
f
Min.
80
80
5
-
-
-
-
70
40
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
-
100
30
0.2
1
0.2
MHz
pF
Classification Of h
FE
1
Rank
Range
O
70 ~ 140
Y
120 ~ 240
GM3669
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