CORPORATION
GM4132
Description
NPN EPITAXIAL PLANAR T RANSISTOR
The GM4132 is designed for power amplifier applications.
ISSUED DATE :2006/02/06
REVISED DATE :
Features
&
breakdown voltage (BV
CEO
=120V)
High
Package Dimensions
&Low collector output capacitance (Typ. 20pF at V
CB
=10V)
&High transition frequency (f
T
=80MHz)
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current
(Pulse 10ms)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
120
120
5
2
3
1.2
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
120
120
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
80
20
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=50uA , I
E
=0
-
V
I
C
=1mA, I
B
=0
-
V
I
E
=50uA ,I
C
=0
1
uA
V
CB
=100V, I
E
=0
1
uA
V
EB
=4V, I
C
=0
400
mV
I
C
=1A, I
B
=100mA
390
V
CE
=5V, I
C
=100mA
-
MHz
V
CE
=5V, I
E
=-100mA, f=30MHz
-
pF
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Classification Of h
FE
Rank
Range
P
82 ~ 180
Q
120 ~ 270
R
180 ~ 390
GM4132
Page: 1/2
GTM [ GTM CORPORATION ]
