GM5401
Description
Package Dimensions
1/2
PNP EPITAXIAL PLANAR TRANSISTOR
T
he GM5401 is designer for general purpose applications requiring high breakdown voltages.
SOT-89
GM
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-160
-150
-5
-600
1
V
V
V
mA
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
at Ta = 25 :
Min.
-160
-150
-5
-
-
-
-
-
-
50
60
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-200
-500
-1
-1
-
240
-
-
6
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
V
V
IC=-100uA, IE =0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-120V , IE=0
VEB=-5V , IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
Test Conditions
GTM [ GTM CORPORATION ]
