GM5551
Description
1/2
NPN EPITAXIAL PLANAR TRANSISTOR
T
he GM5551 is designed for for general purpose applications requiring high breakdown voltages.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCES
VEBO
IC
PD
Ratings
+150
-55 ~ +150
180
160
6.0
600
1.2
V
V
V
mA
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
at Ta = 25 :
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
V
V
IC=100uA
IC=1mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IE=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
Test Conditions
GTM [ GTM CORPORATION ]
