CORPORATION
GM5824
Description
Features
&
Volt V
CEO
60
&
3 Amp
ISSUED DATE :2006/03/10
REVISED DATE :
N P N S I L I C O N E P I TA X I A L P L A N A R T R A N S I S T O R
The GM5824 is designed for high speed switching and low frequency amplifier applications.
Package Dimensions
continuous current
&
Low saturation voltage
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Min.
60
60
6
-
-
-
120
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
200
20
50
150
30
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
60
60
6
3
6
1.2
Unit
:
:
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25 :
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
*h
FE
*fT
Cob
Ton
(Turn-on time)
Tstg
(Storage time)
Tf
(Fall time)
*Non repetitive pulse
, unless otherwise noted)
Max.
Unit
Test Conditions
-
V
I
C
=100uA, I
E
=0
-
V
I
C
=1mA, I
B
=0
-
V
I
E
=100uA, I
C
=0
1.0
uA
V
CB
=40V, I
E
=0
1.0
uA
V
EB
=4V, I
C
=0
500
mV
I
C
=2A, I
B
=0.2A
390
V
CE
=2V, I
C
=100mA
-
MHz
V
CE
=10V, I
E
=-100mA, f=10MHz
-
pF
V
CB
=10V, I
E
=0mA, f=1MHz
-
ns
V
CC
25V, I
C
=3A, I
B
1
=300mA, I
B
2
=-300mA
-
-
Switching characteristics measurement circuit
Classification Of h
FE
Rank
Range
Q
120 ~ 270
R
180 ~ 390
1/2
GTM [ GTM CORPORATION ]
