欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM669A 参数 Datasheet PDF下载

GM669A图片预览
型号: GM669A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 229 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM669A的Datasheet PDF文件第2页  
ISSUED DATE :2005/03/25
REVISED DATE :
GM669A
Description
Package Dimensions
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The GM669A is designed for low frequency power amplifier complementary pair with GM649A.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
= 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current(Pulse)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
)
Max.
-
-
-
10
1
1.5
200
-
-
-
MHz
pF
Unit
V
V
V
uA
V
V
+150
-55 ~ +150
180
160
5
1.5
3
1
V
V
V
A
A
W
Electrical Characteristics
(T
A
= 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE
(sat)
*V
BE
(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
180
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
14
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
I
C
=600mA, I
B
=50mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=10mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Classification Of h
FE
1
Rank
h
FE
1
B
60 ~ 120
C
100 ~ 200
GM669A
1/2