GM6718
Description
1/3
NPN EPITAXIAL PLANAR TRANSISTOR
T
he GM6718 is designed for general purpose medium power amplifier and switching.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
100
100
5
1
1
V
V
V
A
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hfe1
*hfe2
*hfe3
Cob
fT
at Ta = 25 :
Min.
100
100
5
-
-
80
100
20
-
50
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
310
-
20
-
pF
MHz
Unit
V
V
V
nA
mV
IC=100uA , IE=0
IC=1mA. IB=0
IE=10uA, IC=0
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCB=10V, f=1MHz
VCE=10V, IC=50mA, f=100MHz
Test Conditions
*Pulse Test:Pulse width 380us,Duty Cycle 2%