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GM772 参数 Datasheet PDF下载

GM772图片预览
型号: GM772
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 181 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM772的Datasheet PDF文件第2页  
CORPORATION
GM772
Description
PNP EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2002/04/16
REVISED DATE :2006/12/21B
The GM772 is designed for using in output stage of amplifier, voltage regulator DC-DC converter and driver.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
-40
-30
-5
-3
1.2
Unit
:
:
V
V
V
A
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-10uA ,I
C
=0
-1
uA
V
CB
=-30V, I
E
=0
-1
uA
V
EB
=-3V, I
C
=0
-0.5
V
I
C
=-2A, I
B
=-0.2A
-2
V
I
C
=-2A, I
B
=-0.2A
-
V
CE
=-2V, I
C
=-20mA
500
V
CE
=-2V, I
C
=-1A
-
MHz
V
CE
=-20V, I
C
=-20mA, f=100MHz
-
pF
V
CB
=-10V, I
E
=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Classification Of h
FE2
Rank
Range
Q
100 ~ 200
P
160 ~ 320
E
250 ~ 500
GM772
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