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GM8050 参数 Datasheet PDF下载

GM8050图片预览
型号: GM8050
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延型晶体管 [NPN EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 224 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GM8050的Datasheet PDF文件第2页  
GM8050
Description
Package Dimensions
1/2
N P N E P I TA X I A L T R A N S I S T O R
The GM8050 is designed for general purpose amplifier applications.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
IB Base Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
PD
Ratings
+150
-55 ~ +150
40
25
6
1.5
0.5
1
V
V
V
A
A
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
Hfe1
Hfe2
Hfe3
fT
at Ta = 25 :
Min.
40
25
6
-
-
-
-
45
120
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
1.2
1
-
500
-
-
MHz
Unit
V
V
V
nA
nA
V
V
V
IC=100uA
IC=2mA
IE=100uA
VCB=35V
VEB=6V
IC=0.8A, IB=80mA
IC=0.8A, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA
Test Conditions
Classification Of hFE
Rank
hFE
C
120-200
D
160 - 300
E
250 - 500