CORPORATION
GM965
Description
NPN EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2004/04/16
REVISED DATE :2004/12/08B
T
he GM965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Symbol
Tj
Tstg
Ratings
+150
-55 ~ +150
Unit
Absolute Maximum Ratings at Ta = 25 :
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (Continuous)
Collector Current (Peak PT=10mS)
Total Power Dissipation at Ta = 25 :
BVCBO
BVCEO
BVEBO
IC
IC
PD
40
20
7.0
5
8
1.2
V
V
V
A
A
W
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*h
FE
1
*h
FE
2
fT
Cob
at Ta = 25 :
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
MHz
pF
Unit
V
V
V
uA
uA
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
*
Pulse Test: Pulse Width 380us, Duty Cycle
2%
Test Conditions
Classification Of h
FE
1
Rank
Range
Q
230-380
R
340-600
S
560-800
GM965
Page: 1/2
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