CORPORATION
G M A0 6
Description
Package Dimension
NPN SILICON TRANSISTOR
T
he GMA06 is Amplifier Transistor.
ISSUED DATE :2004/05/28
REVISED DATE :
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
80
80
4
500
1.2
V
V
V
mA
W
Unit
Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
*V
CE
(sat)
V
BE
(sat)
*hFE1
*hFE2
fT
at Ta = 25 :
Min.
80
80
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
MHz
Max.
-
-
-
100
100
250
1.2
Unit
V
V
V
nA
nA
mV
V
I
C
=100uA
I
C
=1mA
I
E
=100uA
V
CB
=80V
V
CE
=60V
I
C
=100mA, I
B
=10mA
I
C
=100mA, V
CE
=1V
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=2V, I
C
=10mA, f=100MHz
Test Conditions
*
Pulse Test:Pulse width 380us,Duty Cycle 2%
1/2
GTM [ GTM CORPORATION ]
