ISSUED DATE :2001/10/04
REVISED DATE :2006/05/10C
G M A1 4
Description
Package Dimensions
NP N E PITAX I AL PLANAR T RANSI STOR
The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain.
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
unless otherwise noted)
Max.
Unit
-
-
-
100
100
1.5
2.0
-
-
-
6
MHz
pF
V
V
V
nA
nA
V
V
I
C
=100uA, I
E
=0
I
C
=100uA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Ratings
+150
-55~+150
30
30
10
500
1
Unit
:
:
V
V
V
mA
W
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Test Conditions
GMA14
Page: 1/2
GTM [ GTM CORPORATION ]
