ISSUED DATE :2001/10/04
REVISED DATE :2004/11/18C
G M A4 4
Description
NPN EPITAXIAL PLANAR T RANSISTOR
T
he GMA44 is designed for application requires for high voltage.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
500
400
6.0
300
1.0
V
V
V
mA
W
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE1
hFE2
hFE3
hFE4
Cob
at Ta = 25 :
Min.
500
400
6
-
-
-
-
-
-
40
50
45
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
100
500
100
375
750
750
-
300
-
-
6
pF
Unit
V
V
V
nA
nA
nA
mV
mV
mV
IC=100uA
IC=1mA
IE=10uA
VCB=400V
VCB=400V
VEB=4V
IC=20mA, IB=2mA
IC=50mA, IB=5 mA
IC=1 0mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=20V, f=1MHz
Test Conditions
GMA44
1/2
GTM [ GTM CORPORATION ]
