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GMA64 参数 Datasheet PDF下载

GMA64图片预览
型号: GMA64
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 224 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMA64的Datasheet PDF文件第2页  
ISSUED DATE :2005/04/04
REVISED DATE :
G M A6 4
Description
Features
&
DC current gain
High
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain.
&Complementary with GMA14
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CES
V
EBO
I
C
P
D
+150
-55 ~ +150
-30
-30
-10
-500
1
V
V
V
mA
W
Electrical Characteristics
(Ta = 25 : )
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)1
*V
BE
(on)
*h
FE
1
*h
FE
2
ft
Min.
-30
-30
-10
-
-
-
-
10
20
125
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-1.5
-2.0
-
-
-
Unit
V
V
V
nA
Na
V
V
K
K
MHz
I
C
=-100uA, I
E
=0
I
C
=-100uA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-10V, I
C
=0
I
C
=-100mA, I
B
=-0.1mA
I
C
=-100mA, V
CE
=-5V
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-10mA, f=100MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Test Conditions
GMA64
1/2