ISSUED DATE :2005/03/25
REVISED DATE :
G M A9 4
Description
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GMA94 is designed for application requires high voltage.
Features
&
voltage: V
CEO
=400V (min) at I
C
=1mA
High
Package Dimensions
&High current gain: I
C
=300mA at 25
&Complementary with GMA44
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Ts
TG
V
CBO
V
CEO
V
EBO
I
C
P
D
+150
-55 ~ +150
-400
-400
-6
-500
1
V
V
V
mA
W
Electrical Characteristics
(Ta = 25 : )
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
CE
(sat)3
*V
BE
(sat)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
Min.
-400
-400
-6
-
-
-
-
-
-
-
40
50
45
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-500
-100
-350
-500
-750
-750
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100uA, I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, V
BE
=0
V
EB
=-6V, I
C
=0
I
C
=-1mA, I
B
=-0.1mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-50mA
V
CE
=-10V, I
C
=-100mA
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Test Conditions
GMA94
1/2
GTM [ GTM CORPORATION ]
