ISSUED DATE :2005/07/01
REVISED DATE :
G M B D 1 2 0 1 \ A\ C \ S
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 1 0 0 V, C U R R E N T 2 0 0 m A
The GMBD1201\A\C\S are general purpose for small signal diodes.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
10 C
0C
Absolute Maximum Ratings
(T
A
= 25 : )
Parameter
Max. Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward surge Current
@1s
@1ms
Symbol
V
RRM
I
F(AV)
I
FSM
PD
R
JA
T
STG
T
J
Power Dissipation
Thermal Resistance Junction to Ambient Air
Storage Temperature Range
Operating Junction Temperature
Ratings
100
200
1
2
350
357
-55 ~ +150
+150
Unit
V
mA
A
mW
: /W
:
:
Electrical Characteristics
(T
A
= 25 : )
Characteristics
Breakdown Voltage
Forward Voltage
Symbol
V
R
V
F
Min.
100
-
-
-
-
Reverse Current
I
R
-
-
-
-
-
-
Typ.
-
Max.
-
700
800
1.1
1.2
1.3
-
-
-
-
-
800
900
1.2
1.3
1.4
25
50
5.0
2.0
4.0
Unit
Test Conditions
V
I
R
=100uA
mV I
F
=1mA
mV I
F
=10mA
V
V
V
nA
nA
uA
pF
ns
I
F
=100mA
I
F
=200mA
I
F
=300mA
V
R
=20V
V
R
=50V
V
R
=50V, T
A
=150 :
V
R
=0, f=1.0MHz
I
F
=I
R
=10mA, I
RR
=1mA, R
L
=100
Total Capacitance
Reverse Recovery Time
C
T
t
rr
1/3
GTM [ GTM CORPORATION ]
