ISSUED DATE :2002/11/12
REVISED DATE :2004/11/30B
G M B D 2 0 0 4 \ A\ C \ S
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
Description
package,
T
he GMBD2004\A\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23
Package Dimensions
Style:
Pin1: Anode, 2: No Connection, 3: Cathode
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
10 C
0C
F
0.45
0.55
M
Absolute Maximum Ratings at
Ta = 25 : unless otherwise specified
Parameter
Repetitive Peak Reverse Voltage
Continuous reverse voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward surge Current @t =1.0us
@t=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Storage Temperature Range
Symbol
V
RRM
VR(V
RWM
)
VR(
RMS
)
IFM
IFSM
PD
R
JA
Ratings
300
240
170
225
4
1
350
357
-65 ~ +150
Unit
V
V
V
mA
A
mW
/W
Tj,Tstg
Characteristics
Characteristics
Forward Voltage
at
Ta = 25 : unless otherwise specified
Symbol
VF
Min.
-
-
Max.
0.85
1
1.25
100
Unit
V
V
V
nA
uA
IF = 20mA
IF = 100mA
IF = 225mA
VR = 240V
VR = 240V ,Tj=150
Test Conditions
Reverse Current
IR
-
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 30mA, reverse current of 30mA, R
L
=100 Ł and recovery to I
RR
=-3mA.
3. ESD sensitive product handling required.
1/2
GTM [ GTM CORPORATION ]
