GMBD4148
Description
1/1
T
he GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
Style : Pin 1.Anode 2.NC 3.Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Continuous Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Symbol
Tj
Tstg
V
R
I
F
I
FSM
Ratings
+150
-65~+150
70
200
500
Unit
V
mA
mA
Characteristics
Characteristic
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
Reverse Recovery Time
at Ta = 25 :
Symbol
VF
VR
IR
CT
Trr
Min.
-
100
-
-
-
Max.
1
-
5
4
4
Unit
V
V
uA
pF
nS
IF=10mA
IR=100uA
VR=75V
VR=0V,F=1MHz
IF=IR=10mA, RL=100
Measured at IR=1mA
Test Conditions
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165
GTM [ GTM CORPORATION ]
