GM BT1015
Description
1/2
P NP E PITAXI AL P L ANAR T RANS ISTO R
T
he GMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Package Dimensions
SOT-23
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
-50
-50
-5
-150
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
fT
Cob
at Ta = 25 :
Min.
-50
-50
-5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-300
-1.1
700
-
-
7
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-50V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz,IE=0
*Pulse Test: Pulse width 380us ,Duty cycle
A4Y
120-140
A4G
200-400
A4B
350-700
2%
Test Conditions
Classification Of hFE1
Rank
Range
GTM [ GTM CORPORATION ]
