ISSUED DATE :2005/06/28
REVISED DATE :
G M B T 11 3 2
Description
PNP EPITAXIAL PLANAR TRANSISTOR
The GMBT1132 is designed for general purpose amplifier applications.
Features
&
V
CE(sat)
=-200mV(Typ.) (I
C
/I
B
=-500mA/-50mA)
Low
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
,unless otherwise noted)
Max.
Unit
-
-
-
-500
-500
-500
390
-
30
MHz
pF
V
V
V
nA
nA
mV
I
C
=-50uA , I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50uA ,I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-500mA, I
B
=-50mA
V
CE
=-3V, I
C
=-100mA
V
CE
=-5V, I
C
=-50mA, f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Ratings
+150
-55~+150
-40
-32
-5
-1
-2
225
Unit
V
V
V
A
A
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
-40
-32
-5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-200
-
150
20
Test Conditions
Classification Of h
FE
Rank
Range
B32P
82 - 180
B32Q
120 - 270
B32R
180 - 390
1/3