ISSUED DATE :2003/01/09
REVISED DATE :2004/12/16B
GM BT1623
Description
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GMBT1623 is designed for use driver stage of AF amplifier and general purpose application.
Package Dimensions
REF
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
60
50
5
150
250
Unit
V
V
V
mA
mW
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
fT
Cob
at Ta = 25 :
Min.
60
50
5
-
-
-
-
90
25
80
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1.0
600
-
-
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
mV
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Test Conditions
Classification of h
FE
1
Rank
Range
L6P
90 - 180
L6Y
135 - 270
L6G
200 - 400
L6B
300 - 600
GMBT1623
Page: 1/2
GTM [ GTM CORPORATION ]
