CORPORATION
G M BT 1 9 5
Description
Features
&
Volt V
CEO
-60
The GMBT195 is designed for medium power amplifier applications.
ISSUED DATE :2006/06/08
REVISED DATE :
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Package Dimensions
&-1 Amp continuous current
&Complementary to GMBT194
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Symbol
Ratings
Unit
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
(Note1)
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
+150
-55~+150
-80
-60
-5
-1
-2
500
:
:
V
V
V
A
A
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Cob
Min.
-80
-60
-5
-
-
-
-
-
-
-
100
100
80
15
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-100uA ,I
C
=0
-100
nA
V
CB
=-60V, I
E
=0
-100
nA
V
CES
=-60V
-100
nA
V
EB
=-4V, I
C
=0
-0.3
V
I
C
=-500mA, I
B
=-50mA
-0.6
V
I
C
=-1A, I
B
=-100mA
-1.2
V
I
C
=-1A, I
B
=-100mA
-1.0
V
V
CE
=-5V, I
C
=-1A
-
V
CE
=-5V, I
C
=-1mA
300
V
CE
=-5V, I
C
=-500mA
-
V
CE
=-5V, I
C
=-1A
-
V
CE
=-5V, I
C
=-2A
-
MHz
V
CE
=-10V, I
C
=-50mA, f=100MHz
10
pF
V
CB
=-10V, I
E
=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
GMBT195
Page: 1/2
GTM [ GTM CORPORATION ]
