CORPORATION
G M BT 2 4 11
Description
Features
&
=500mA
I
CMax.
The GMBT2411 is designed for medium power amplifier applications.
ISSUED DATE :2006/09/14
REVISED DATE :
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Package Dimensions
&Low V
CE(sat).
Optimal for low voltage operation.
&Complementary to GMBT1036
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Symbol
Ratings
Unit
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
+150
-55~+150
40
32
5
500
225
:
:
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Min.
40
32
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
250
6
, unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=100uA , I
E
=0
-
V
I
C
=1mA, I
B
=0
-
V
I
E
=100uA ,I
C
=0
1
uA
V
CB
=20V, I
E
=0
1
uA
V
EB
=4V, I
C
=0
400
mV
I
C
=500mA, I
B
=50mA
390
V
CE
=3V, I
C
=100mA
-
MHz
V
CE
=5V, I
E
=-20mA, f=100MHz
-
pF
V
CB
=10V, I
E
=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Classification Of h
FE
Rank
Range
CP
82 - 180
CQ
120 - 270
CR
180 - 390
GMBT2411
Page: 1/2
GTM [ GTM CORPORATION ]
