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GMBT2714 参数 Datasheet PDF下载

GMBT2714图片预览
型号: GMBT2714
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 220 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMBT2714的Datasheet PDF文件第2页  
ISSUED DATE :2005/11/22
REVISED DATE :
GM BT2714
Description
Features
&
frequency
High
N P N EP I TAXI AL PL AN AR T R AN S I ST O R
The GMBT2714 is designed for use in FM, RF, MIX and IF amplifier application.
&Very low capacitance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
40
30
4
20
225
Unit
:
:
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
fT
Cob
Min.
40
30
4
-
-
-
-
40
650
-
Typ.
-
-
-
-
-
-
-
-
-
0.8
, unless otherwise noted)
Max.
Unit
-
-
-
500
500
500
950
200
-
-
V
V
V
nA
nA
mV
mV
MHz
pF
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=18V, I
E
=0
V
EB
=4V, I
C
=0
Test Conditions
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=6V, I
C
=1mA
V
CE
=10V, I
C
=4mA, f=100MHz
V
CB
=10V, f=1MHz
Classification Of h
FE
Rank
Range
R
40 ~ 80
O
70 ~ 140
Y
100 ~ 200
GMBT2714
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