ISSUED DATE :2005/05/09
REVISED DATE :
GM BT3838
Description
Features
&
transition frequency
High
Package Dimensions
NP N EP ITAX IAL PL ANAR T RANS ISTO R
The GMBT3838 is designed for high frequency amplifier transistor.
&Small rbb’-Cc and high gain
&Small NF
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
,unless otherwise noted)
Max.
Unit
-
-
-
500
500
500
400
-
1.5
12
-
GHz
pF
ps
dB
V
V
V
nA
nA
mV
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA,I
C
=0
V
CB
=10V, I
E
=0
V
EB
=2V, I
C
=0
I
C
=10mA, I
B
=5mA
V
CE
=10V, I
C
=5mA
V
CE
=10V, I
E
=10mA, f=500MHz
V
CB
=10V, f=1MHz
VCB=10V, I
C
=10mA, f=31.8MHz
VCE=6V, IC=2mA, f=500MHz, Rg=50
Ratings
+150
-55~+150
20
11
3
50
200
Unit
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
Cob
rbb-Cc
NF
Min.
20
11
3
-
-
-
56
1.4
-
-
-
Typ.
-
-
-
-
-
-
-
3.2
0.8
4
3.5
Test Conditions
Classification Of h
FE
Rank
Range
A
56 ~ 220
B
200 ~ 400
1/2
GTM [ GTM CORPORATION ]
