CORPORATION
G M BT 4 4 0 3
Description
Features
&
DC Current Gain: 100-300 at 150mA
High
& Complementary to GMBT4401
ISSUED DATE :2001/09/20
REVISED DATE :2006/02/08B
P NP EP ITAX I AL PL ANAR T RANSI STOR
The GMBT4403 is designed for general purpose applications requiring high breakdown voltage.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-40
-40
-5
-600
225
Unit
:
:
V
V
V
mA
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CE
X
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Cob
Min.
-40
-40
-5
-
-
-
-
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
, unless otherwise noted)
Max.
-
-
-
-100
-400
-750
-950
-1.3
-
-
-
300
-
-
8.5
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
V
I
C
=-100uA
I
C
=-1mA
I
E
=-10uA
V
CE
=-35V, V
BE
=-0.4V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CE
=-10V, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
1/2
GTM [ GTM CORPORATION ]
