GM BT5089
Description
1/2
NP N E PITAXI AL P L ANAR T RANS ISTO R
T
he GMBT5089 is designed for low noise, high gain, general purpose amplifier applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
10 C
0C
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
30
25
4.5
50
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE1
hFE2
hFE3
fT
Cob
at Ta = 25 :
Min.
30
25
4.5
-
-
-
-
400
450
400
50
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
4
MHz
pF
Max.
-
-
-
50
100
500
800
1200
Unit
V
V
V
nA
nA
mV
mV
IC=100uA
IC=1mA
IE=10uA
VCB=15V
VEB=4.5V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz
*Pulse Test:Pulse Width <=380us, Duty Cycle <=2%
Test Conditions
GTM [ GTM CORPORATION ]
