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GMBT8550 参数 Datasheet PDF下载

GMBT8550图片预览
型号: GMBT8550
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 224 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GMBT8550的Datasheet PDF文件第2页  
GM BT8550
Description
Package Dimensions
1/2
P N P E PI TA XI A L T RA N SI STO R
The GMBT8550 is designed for general purpose amplifier applications.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
-25
-20
-5
-700
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(on)
hFE
fT
Cob
at Ta = 25 :
Min.
-25
-20
-5
-
-
-
-
100
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-100
-500
-1
500
-
10
MHz
pF
Unit
V
V
V
uA
nA
mV
V
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-6V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
Test Conditions
Classification Of hFE
Rank
hFE
B9C
100 - 200
B9D
150 - 300
B9E
250 - 500