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GMBT9014 参数 Datasheet PDF下载

GMBT9014图片预览
型号: GMBT9014
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管外延 [PNP EPITAXIAL TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 250 K
品牌: GTM [ GTM CORPORATION ]
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GM BT9014
Description
Package Dimensions
1/3
N P N E PI TA XI A L T RA N SI STO R
The GMBT9014 is designed for general purpose amplifier applications.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
50
45
5
100
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
Cob
at Ta = 25 :
Min.
50
45
5
-
-
-
-
0.58
100
150
-
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
Test Conditions
Classification Of hFE
Rank
hFE
B
100 - 300
C
200-600
D
400-1000