ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
G M B TA 0 6
Description
Package Dimensions
NPN SILICON TRANSISTOR
The GMBTA06 is designed for general purpose amplifier applications.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
(Note1)
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
P
D
Ratings
+150
-55~+150
80
80
4
500
350
Unit
:
:
V
V
V
mA
mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Min.
80
80
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
,unless otherwise noted)
Max.
-
-
-
100
100
250
1.2
-
-
-
MHz
Unit
V
V
V
nA
nA
mV
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=80V, I
E
=0
V
CE
=80V, I
B
=0
I
C
=100mA, I
B
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=2V, I
C
=10mA, f=100MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle 2%
Test Conditions
GMBTA06
Page: 1/2
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